Etching of Si3N4 by SF6/H2 and SF6/D2 plasmas

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...

Diagnostics of etching plasmas *

Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the reactor performance are needed to monitor and manage these effects...

Study of C4F8 ÕN2 and C4F8 ÕArÕN2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC

We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...

Etching with Electron Beam Generated Plasmas

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این تحقیق از دو قسمت اصلی تشکیل شده است: در قسمت اول فراگیری ختمیت به ویژه درک و تولید اینگونه جملات توسط فراگیران ایرانی زبان انگلیسی مورد بررسی قرار گرفته است. قضاوت تعدادی انگلیسی زبان بر روی این جملات نیز هدفی دیگر بود که در این رساله بررسی شده است. از موضوعات دیگر تفاوت بین نشانه های ختمیت در زبان انگلیسی و فارسی و تاثیر زبان اول فراگیران در درک و تولید اینگونه جملات است. در قسمت دوم استفا...